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Everspin Technologies and GLOBALFOUNDRIES Extend MRAM Joint Development Agreement to 12nm
Magnetoresistive Random Access Memory (MRAM) continues to scale for both eMRAM and discrete MRAM solutions
“Our partnership with
Everspin’s STT-MRAM and Toggle MRAM devices allow enterprise infrastructure, data center, industrial, IoT and a host of other application providers to increase the reliability and performance of systems where high-performance data persistence is critical. This is achieved by delivering protection against power loss without the use of supercapacitors or batteries, and in many applications providing the performance and endurance required for code and data storage in a single persistent device.
“Due to our industry leading partnership with GLOBALFOUNDRIES, we were first with the commercialization of Spin-transfer Torque MRAM,” said
Cautionary Statement Regarding Forward-Looking Statements
This press release contains forward-looking statements regarding future events that involve risks and uncertainties that could cause actual results or events to differ materially from the expectations disclosed in the forward-looking statement, including, but not limited to; the anticipated market adoption of Everspin’s products and technology at the rate