Everspin Press Releases
View printer-friendly version << Back
Everspin Announces Production Release of 1 and 2 Gigabyte nvNITRO NVMe SSDs
Accelerators to be Showcased at Flash Memory Summit
This Smart News Release features multimedia. View the full release here: http://www.businesswire.com/news/home/20170807005124/en/
Everspin’s new MRAM-based nvNITRO storage accelerators operate at 1.5 million IOPS with 6μs end-to-end latency
Enterprise storage system vendors can now leverage MRAM’s memory speed in traditional enterprise storage form factors and protocols. Everspin’s ST-MRAM ensures that the data is persistent and power fail safe without the need for supercapacitors or battery backup, saving critical space in storage racks. The high cycle endurance of ST-MRAM also enables unlimited uniform drive writes per day, eliminating the need for complex wear-leveling algorithms that are required in NAND Flash-based drives. With Everspin’s ST-MRAM endurance, there is no degradation in read/write performance over time.
“Everspin is proud to announce the production release of our nvNITRO
NVMe storage accelerators,” said
“Xilinx is pleased to see the combination of production-ready Spin
Torque MRAM and our UltraScale™ FPGAs in the
“We are delighted to have co-developed this groundbreaking ST-MRAM
nvNITRO Accelerator and are equally excited about its potential to be
disruptive in the storage market,” said
This high-end performance, combined with consistent ultra-low latency, means that demanding applications such as high frequency financial trading systems can depend on faster, more predictable transaction recording. The read/write speed combined with low latency brings significant value to many storage applications such as database and file system acceleration, online transaction processing log caches, and metadata caching/buffering. The need for higher speed across storage networks and data centers can now be met with the industry’s first all-MRAM storage devices, providing both block access storage, and byte addressable memory functions on the same platform. The PCIe Gen 3, NVMe interface makes it simple to add this capability to existing storage networks and servers without the need for special drivers or operating system changes.
Key features & highlights include:
- 1GB and 2GB storage capacities
- PCIe Gen3 x8, half-height, half-length or U.2 form factor
- NVMe 1.1+ for block level access
- Memory mapped IO (MMIO) for byte level access
- 6μS Ultra-low access latency (as low as 2μS with SPDK drivers)
- Consistent latency (short tail)
- Customer-defined features using own RTL with programmable FPGA
- Inherently power fail safe; no system enablement required
- PCIe peer-to-peer communication for minimum processor overhead and lower latency
- ES1GB-N03 and ES2GB-N03 HHHL form factor
- ES1GB-U201 and 2GB ES2GB-U201 U.2 form factor
-
Pricing starting at
$2,200
Product Demonstrations in Booth #319 at Flash Memory Summit
About
Cautionary Statement Regarding Forward-Looking Statements
The statements in this press release regarding the development and
production of Everspin’s MRAM solutions are forward-looking statements
that are subject to risks and uncertainties. Risks that could cause
these forward-looking statements not to come true include, but are not
limited to: the risk that unexpected technical difficulties may develop
in the final stages of development or production of these products; and
that customers may not perceive the benefits of Everspin’s MRAM
solutions to be as
View source version on businesswire.com: http://www.businesswire.com/news/home/20170807005124/en/
Source:
Everspin Contact:
Story Public Relations
Michael
Schoolnik, 415-674-3816
Michael@storypr.com